时间：2022年9月23日（周五） 15:30-17:00

Time: 15:30-17:00, Friday, September 23, 2022

地点：西湖大学云栖校区2号楼611室

Venue: Room 611, Building 2, Yunqi Campus

主持人: 西湖大学工学院 孔玮 助理教授

Host: Wei Kong, Assistant Professor, School of Engineering, Westlake University

语言：英文

Language: English

主讲嘉宾/Speaker：

Prof. Xinran Wang 王欣然

College of Electronic Science and Engineering

Nanjing University

主讲人简介/Biography:

Xinran Wang is a professor and vice dean of the College of Electronic Science and Engineering and executive dean of the College of Integrated Circuits at Nanjing University. Winner of the National Science Fund for Distinguished Young Scholars.Special professor of Ministry of education of Chang Jiang Scholars Program. He graduated from the Department of Physics of Nanjing University in 2004 and received his Ph.D. in Physics from Stanford University in 2010. From 2010 to 2011, he worked as a postdoctoral researcher at Stanford University and University of Illinois at Urbana-Champaign. He returned to Nanjing University to work in 2011. He mainly studies next-generation information materials, devices and integrated circuits, especially in the field of two-dimensional semiconductors, and has made outstanding achievements in the field of two-dimensional semiconductors. He has published more than 160 papers, with a total of more than 24,000 citations. He has won the China Youth May Fourth Medal, the China Youth Science and Technology Award, the first prize of Jiangsu Science and Technology Award, the second prize of the National Natural Science Award, the Huang Kun Physics Award of the Chinese Physical Society, and the Science Exploration Award. He is currently a member of the All-China Youth Federation, vice-chairman of the Jiangsu Youth Federation, vice-chairman of the Jiangsu Association of Young Scientists and Technologists, deputy editor-in-chief of the international academic journal npj 2D materials and applications, editorial board member of Nano Research, Chinese Science: Information Science, and Journal of Semiconductors.

讲座摘要/Abstract:

2D transition-metal dichalcogenide semiconductors are promising candidates in future electronics due to unmatched device performance at atomic limit and low-temperature heterogeneous integration. In this talk, I will present our recent advances in this area. The main topics include wafer-scale single-crystal epitaxial growth, uniform bi-layer material growth, dielectric integration and Ohmic contact, and heterogeneous integration with mainstream technology. These advances clearly demonstrate the promise of 2D semiconductors in next-generation electronic and optoelectronic applications.

References:

[1] Weisheng Li et al., Nat. Electron., 2 563 (2019).

[2] Taotao Li et al., Nat. Nanotech., (2021) DOI: 10.1038/s41565-021-00963-8.

[3] Wanqing Meng et al., Nat. Nanotech., (2021) DOI: 10.1038/s41565-021-00966-5.

[4] Zhihao Yu et al. IEDM (2020) DOI: 10.1109/IEDM13553.2020.9371917.

[5] Lei Liu et al. Nature 605, 69(2022).

讲座联系人/Contact:

工学院石怀玮

shihuaiwei@westlake.edu.cn